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Spin and carrier relaxation dynamics in InAs/GaAs quantum-dot spin-LEDs
Autor:

W. Löffler, N. Höpcke, C. Mauser, J. Fallert, T. Passow, B. Daniel, S. Li, D. Litvinov, D. Gerthsen, H. Kalt, M. Hetterich

Quelle:

J. Phys. Conf. Ser. 61, 745 (2007)

We investigate the dynamics of electrons injected into InAs/GaAs quantum dots by initializing and further observing the spin state of the electrons. For this purpose, we use spin polarized light-emitting diodes where the electron spin is set in a semimagnetic ZnMnSe layer. We find that the degree of optical polarization depends strongly on the ground state energy of the quantum dot. A dependence of polarization on dopant concentration in the spin aligner suggests an influence of residual electrons in the quantum dots.