Using indium as catalyst for growth and simultaneously as doping source, ordered arrays of n-type ZnO single crystal nanorods have been perpendicularly grown on p-GaN/Al2O3 substrates with a vapor phase transport growth method. The low temperature photoluminescence measurements of the n-ZnO nanorods show dominant In-related neutral donor bound exciton emission in the ultraviolet region. Electrical transport measurements performed on single n-ZnO nanorods yield resistances of about 50–200 kOhm and a typical specific resistivity of 2.0×10−2 Ohm cm. The resistivity is one order of magnitude reduced by introducing In compared to the nominally undoped ZnO nanorods.
H. Zhou, J. Fallert, J. Sartor, R.J.B. Dietz, C. Klingshirn, H. Kalt, D. Weissenberger, D. Gerthsen, H. Zeng, W. Cai
Appl. Phys. Lett. 92, 132112 (2008)