Parallel Hall effect from three-dimensional single-component metamaterials
C. Kern, M. Kadic, and M. Wegener
Appl. Phys. Lett. 107, 132103 (2015)
- Datum: 29.09.2015
We propose a class of three-dimensional metamaterial architectures composed of a single doped semiconductor (e.g., n-Si) in air or vacuum which lead to an unusual effective behavior of the classical Hall effect. Using an anisotropic structure, we numerically demonstrate a Hall voltage that is parallel—rather than orthogonal—to the external static magnetic-field vector (“parallel Hall effect”). The sign of this parallel Hall voltage can be determined by a structure parameter. Together with the previously demonstrated positive or negative orthogonal Hall voltage, we demonstrate four different sign combinations.