The Materials Challenge in Diffraction-Unlimited Direct-Laser-Writing Optical Lithography
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                    Autor:
                    
        
J. Fischer, G. von Freymann, and M. Wegener
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                    Quelle:
                    
        Adv. Mater. 22, 3578 (2010)
 - Datum: 24.8.2010
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Abstract:
Using a novel photoresist (composed of pentaerythritol triacrylate and isopropyl thioxanthone) that favors stimulated emission depletion by a π-π* transition and using a two-color two-photon excitation scheme, 65-nm wide lines are achieved. This value is limited by parasitic two-photon absorption of the continuous-wave depletion beam. It is estimated that, without this process, line widths of 30 nm are in reach.
 
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