Spatially Localized Photoluminescence at 1.5 Micrometers Wavelength in Direct Laser Written Optical Nanostructures
- Author: S. Wong, O. Kiowski, M. Kappes, J.K. Lindner, N. Mandal, F.C. Peiris, G.A. Ozin, M. Thiel, M. Braun, M. Wegener, and G. von Freymann
- Source: Adv. Mater. 20, 4097 (2008)
- Date: 4.12.2008
A 3D direct laser writing (3D DLW) compatible photoresist, consisting of erbium-doped arsenic trisulfide (Er:As2S3) has been developed. This photoresist simultaneously possess a refractive index (n) of 2.45 and photoluminescence at 1.5 μm wavelength that is also spatially localizable. This enables 3D DLW to produce high-refractive index photonic structures with spatially selective optical activity without the need for post-processing steps.